Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

A. Harken; A. Sezer; B. W. Robertson; J. I. Brand; P. Welsch; S. Adenwalla

arxiv: cond-mat/0101267 · v1 · submitted 2001-01-17 · ❄️ cond-mat.mtrl-sci

Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

S. Adenwalla , P. Welsch , A. Harken , J. I. Brand , A. Sezer , B. W. Robertson This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords carbideboroncharacterizationcrystaldiodefabricationheterojunctionphases

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The fabrication, initial structural characterization and diode measurements are reported for the first boron carbide / silicon carbide heterojunction diode. Current-voltage curves obtained for operation at temperatures from 24 C to 388 C. PECVD-deposited undoped boron carbide material is highly crystalline and consists of a variety of polytypes of B-C with crystal sizes as large as 110 nm. Crystal phases are similar to those for PECVD B-C on Si but only partially match known boron and boron-rich B-C phases.

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Fabrication and Characterization of Boron Carbide / n-Silicon Carbide Heterojunction Diodes

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