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Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films

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arxiv cond-mat/0104562 v1 pith:LW2JJPGO submitted 2001-04-28 cond-mat.supr-con

S. Patnaik , L.D. Cooley , A. Gurevich , A.A. Polyanskii , J. Jiang , X.Y. Cai , A.A. Squitieri , M.T. Naus
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M.K. Lee J.H. Choi L. Belenky S.D. Bu J. Letteri X. Song D.G. Schlom S. E. Babcock C. B. Eom E.E. Hellstrom D. C. Larbalestier
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classification cond-mat.supr-con
keywords anisotropyresistivityc-axisdiagramelectronicfield-temperaturefilmshc2par
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An important predicted, but so far uncharacterized, property of the new superconductor MgB2 is electronic anisotropy arising from its layered crystal structure. Here we report on three c-axis oriented thin films, showing that the upper critical field anisotropy ratio Hc2par/Hc2perp is 1.8 to 2.0, the ratio increasing with higher resistivity. Measurements of the magnetic field-temperature phase diagram show that flux pinning disappears at H* ~ 0.8Hc2perp(T) in untextured samples. Hc2par(0) is strongly enhanced by alloying to 39 T for the highest resistivity film, more than twice that seen in bulk samples.

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