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Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor

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arxiv cond-mat/0108510 v1 pith:2ZCSH4TQ submitted 2001-08-30 cond-mat.mes-hall cond-mat.str-el

G. Schmidt , G. Richter , P. Grabs , C. Gould , D. Ferrand , L. W. Molenkamp This is my paper · ORCID
classification cond-mat.mes-hallcond-mat.str-el
keywords magnetoresistancenon-magneticsemiconductoreffectlargespinchannelcurrent
verification ladder T0 review T1 audit T2 compute T3 formal
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A novel magnetoresistance effect, due to the injection of a spin-polarized electron current from a dilute magnetic into a non-magnetic semiconductor, is presented. The effect results from the suppression of a spin channel in the non-magnetic semiconductor and can theoretically yield a positive magnetoresistance of 100%, when the spin flip length in the non-magnetic semiconductor is sufficiently large. Experimentally, our devices exhibit up to 25% magnetoresistance.

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