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Parallel magnetic field induced magnetoresistance peculiarities of the double quantum well filled with electrons or holes

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arxiv cond-mat/0306156 v1 pith:ZPI2HWIR submitted 2003-06-06 cond-mat.mes-hall

M. V. Yakunin , G. A. Alshanskii , Yu. G. Arapov , G. I. Harus , V. N. Neverov , N. G. Shelushinina , O. A. Kuznetsov , B. N. Zvonkov
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E. A. Uskova L. Ponomarenko A. de Visser
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keywords peculiaritiesdqwsfieldsparallelcontainingdoubleholemagnetic
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In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities positioned in high fields (~30 T) can only be explained if the spin-splitting of the In_xGa_{1-x}As conduction band is considered, that was neglected in the GaAs/AlGaAs heterostructures, for which solely the effects of this nature have been observed so far. In Ge/p-Ge_{1-x}Si_x DQWs containing a hole gas, local MR peculiarities under parallel fields are discovered as well. But the tunnel gap in these DQWs is too narrow to be responsible for these observations. We suppose, they are due to a complicated shape of the hole confinement subbands.

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