Interaction Correction to the Longitudinal Conductivity and Hall Resistivity in High Quality Two-Dimensional GaAs Electron and Hole Systems

We present a systematic study of the corrections to both the longitudinal conductivity and Hall resistivity due to electron-electron interactions in high quality GaAs systems using the recent theory of Zala et al. [Phys. Rev. B 64, 214204 (2001)]. We demonstrate that the interaction corrections to the longitudinal conductivity and Hall resistivity predicted by the theory are consistent with each other. This suggests that the anomalous metallic drop in resistivity at B=0 is due to interaction effects and supports the theory of Zala et al.