Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

A.J. Freeman; C. Stampfl; J.E. Medvedeva; N. Newman; X.Y. Cui

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Half-metallicity and efficient spin injection in AlN/GaN:Cr (0001) heterostructure

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arxiv cond-mat/0410455 v1 pith:Y2UP6QTC submitted 2004-10-18 cond-mat.mtrl-sci

J.E. Medvedeva , A.J. Freeman , X.Y. Cui , C. Stampfl , N. Newman This is my paper

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keywords efficientinjectionspinadjustingbandgapbarriercharacterconcentration

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First-principles investigations of the structural, electronic and magnetic properties of Cr-doped AlN/GaN (0001) heterostructures reveal that Cr segregates into the GaN region, that these interfaces retain their important half-metallic character and thus yield efficient (100 %) spin polarized injection from a ferromagnetic GaN:Cr electrode through an AlN tunnel barrier - whose height and width can be controlled by adjusting the Al concentration in the graded bandgap engineered Al(1-x)Ga(x)N (0001) layers.

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