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Quantum Spin Hall Effect in Graphene

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arxiv cond-mat/0411737 v2 pith:6BMTXFVC submitted 2004-11-29 cond-mat.mes-hall

C.L. Kane , E.J. Mele This is my paper · ORCID
classification cond-mat.mes-hall
keywords spinedgegraphenestateschargedisordereffectselectronic
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We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the quantized transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are non chiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder and symmetry breaking fields are discussed.

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Cited by 2 Pith papers

Reviewed papers in the Pith corpus that reference this work. Sorted by Pith novelty score. Full citation record

  1. Strongly Correlated Transport in Topological Y-Junction Devices

    cond-mat.mes-hall 2025-06 conditional novelty 6.0 of 10

    In the strong-repulsion window 2/9 < g < 1/2 with degenerate tunneling phases, a helical-edge Y-junction flows to an intermediate RG fixed point whose spin conductance rises smoothly from zero to 4/3 e^2/h.

  2. Computational quantum transport: a scattering approach perspective

    cond-mat.mes-hall 2024-07 unverdicted novelty 3.0 of 10

    Review of scattering and NEGF methods for quantum transport, with pedagogical derivations, equivalence proof, algorithm analysis as Gaussian elimination variants, and example applications.

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