Transition from Mott insulator to superconductor in GaNb₄Se₈ and GaTa₄Se₈ under high pressure

Electronic conduction in GaM$_{4}$Se$_{8}$ (M=Nb;Ta) compounds with the fcc GaMo$_{4}$S$_{8}$-type structure originates from hopping of localized unpaired electrons (S=1/2) among widely separated tetrahedral M$_{4}$ metal clusters. We show that under pressure these systems transform from Mott insulators to a metallic and superconducting state with T$_{C}$=2.9 and 5.8K at 13 and 11.5GPa for GaNb$_{4}$Se$_{8}$ and GaTa$_{4}$Se$_{8}$, respectively. The occurrence of superconductivity is shown to be connected with a pressure-induced decrease of the MSe$_{6}$ octahedral distortion and simultaneous softening of the phonon associated with MSe-bonds.