Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

K. Ploog; R. G. Mani; V. Narayanamurti; V. Umansky; W. B. Johnson

arxiv: cond-mat/0606517 · v1 · submitted 2006-06-20 · ❄️ cond-mat.mes-hall

Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

R. G. Mani , W. B. Johnson , V. Umansky , V. Narayanamurti , K. Ploog This is my paper

classification ❄️ cond-mat.mes-hall

keywords algaasclassdiagonal-effectgaashallhall-high

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An experimental study of the high mobility GaAs/AlGaAs system at large-$\nu$ indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and suggests a new class of integral quantum Hall effect, which is characterized by "anti-phase" Hall- and diagonal- resistance oscillations.

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Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

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