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Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells

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arxiv cond-mat/0611399 v1 pith:CDOHRKI6 submitted 2006-11-15 cond-mat.mes-hall

B. Andrei Bernevig , Taylor L. Hughes , Shou-Cheng Zhang This is my paper · ORCID
classification cond-mat.mes-hall
keywords quantumeffectphasetopologicaltransitionconventionalhallhgte
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abstract

We show that the Quantum Spin Hall Effect, a state of matter with topological properties distinct from conventional insulators, can be realized in HgTe/CdTe semiconductor quantum wells. By varying the thickness of the quantum well, the electronic state changes from a normal to an "inverted" type at a critical thickness $d_c$. We show that this transition is a topological quantum phase transition between a conventional insulating phase and a phase exhibiting the QSH effect with a single pair of helical edge states. We also discuss the methods for experimental detection of the QSH effect.

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Cited by 2 Pith papers

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  1. Fundamental limits to far-infrared lasing in Auger-suppressed HgCdTe quantum wells

    cond-mat.mes-hall 2019-08 conditional novelty 7.0 of 10

    A theory shows that narrow HgCdTe quantum wells, whose electron-hole dispersion is nearly Dirac-like, suppress Auger recombination enough to allow lasing at wavelengths up to about 50 microns at 77 K with low threshol...

  2. Computational quantum transport: a scattering approach perspective

    cond-mat.mes-hall 2024-07 unverdicted novelty 3.0 of 10

    Review of scattering and NEGF methods for quantum transport, with pedagogical derivations, equivalence proof, algorithm analysis as Gaussian elimination variants, and example applications.

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