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Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device

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arxiv cond-mat/0701478 v1 pith:XE6FZLSA submitted 2007-01-19 cond-mat.mes-hall

K. Pappert , S. Hümpfner , C. Gould , J. Wenisch , K. Brunner , G. Schmidt , L.W. Molenkamp This is my paper · ORCID
classification cond-mat.mes-hall
keywords deviceconstrictionimposedlocallymagneticmemorynon-volatileregions
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Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.

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