A Study of the affect of N and B doping on the growth of CVD diamond (100):H 2 X 1 surfaces

We present a study of the effects of Nitrogen and Boron doping on the growth of CVD diamond in the (100) mechanism. These are the first calculations of this type and show that, in accordance with recent experimental results, the presently accepted growth mechanism, that due to Harris, is cataylsed by the presence of subsurface Boron impurities. In contrast, we find that the Harris Mechanism cannot explain growth in the presence of subsurface N and suggest an alternative mechanism.