pith. sign in

arxiv: cond-mat/9712270 · v1 · submitted 1997-12-22 · ❄️ cond-mat.mes-hall · cond-mat.dis-nn

Tunneling in very small GaAs MESFET

classification ❄️ cond-mat.mes-hall cond-mat.dis-nn
keywords gaastransporttunnelingveryblockadeconductanceconsiderationscoulomb
0
0 comments X
read the original abstract

We study the transport through gated GaAS:Si wires of 0.5 micrometer length in the insulating regime and observe transport via elastic tunneling at very low temperature. We describe the mean positive magnetoconductance and the mesoscopic fluctuations of the conductance (versus energy or magnetic field) purely within one electron model without introducing Coulomb blockade considerations.

This paper has not been read by Pith yet.

discussion (0)

Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.