Negative differential resistance due to single-electron switching

C. P. Heij; D. C. Dixon; J. E. Mooij (Delft University of Technology); P. Hadley

arxiv: cond-mat/9809272 · v1 · submitted 1998-09-21 · ❄️ cond-mat.mes-hall

Negative differential resistance due to single-electron switching

C. P. Heij , D. C. Dixon , P. Hadley , J. E. Mooij (Delft University of Technology) This is my paper

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keywords devicedifferentialdisplayingnegativeresistancesingle-electronagreeamplification

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We present the multilevel fabrication and measurement of a Coulomb-blockade device displaying tunable negative differential resistance (NDR). Applications for devices displaying NDR include amplification, logic, and memory circuits. Our device consists of two Al/Al$_{x}$O$_{y}$ islands that are strongly coupled by an overlap capacitor. Our measurements agree excellently with a model based on the orthodox theory of single-electron transport.

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Negative differential resistance due to single-electron switching

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