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Electronic Structure and Thermoelectric Prospects of Phosphide Skutterudites

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arxiv cond-mat/9903177 v1 pith:DJ6FE2DI submitted 1999-03-10 cond-mat.mtrl-sci

classification cond-mat.mtrl-sci
keywords bandcalculationsfillinghighphosphideprospectsskutteruditesstructure
verification ladder T0 review T1 audit T2 compute T3 formal
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The prospects for high thermoelectric performance in phosphide skutterudites are investigated based on first principles calculations. We find that stoichiometric CoP_3 differs from the corresponding arsenide and antimonide in that it is metallic. As such the band structure must be modified if high thermopowers are to be achieved. In analogy to the antimonides it is expected that this may be done by filling with La. Calculations for LaFe_4P_12 show that a gap can in fact be opened by La filling, but that the valence band is too light to yield reasonable p-type thermopowers at appropriate carrier densities; n-type La filled material may be more favorable.

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