Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

(2) Virginia Commonwealth University; (3) Oxford University); A. A. Baski (2); L. J. Whitman (1); R. E. Rudd (3) ((1) Naval Research Laboratory; S. C. Erwin (1)

arxiv: cond-mat/9905150 · v2 · submitted 1999-05-12 · ❄️ cond-mat.mtrl-sci

Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

S. C. Erwin (1) , A. A. Baski (2) , L. J. Whitman (1) , R. E. Rudd (3) ((1) Naval Research Laboratory , (2) Virginia Commonwealth University , (3) Oxford University) This is my paper

classification ❄️ cond-mat.mtrl-sci

keywords modelmicroscopicadsorbateagreementanalyzingappearappliedcalculations

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We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.

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Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

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