Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

D. Gruetzmacher; G. Dehlinger; K. Ensslin; T. Heinzel; T. Ihn; U. Gennser; V. Senz

arxiv: cond-mat/9910228 · v1 · submitted 1999-10-15 · ❄️ cond-mat.mes-hall

Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

V. Senz , T. Heinzel , T. Ihn , K. Ensslin , G. Dehlinger , D. Gruetzmacher , U. Gennser This is my paper

classification ❄️ cond-mat.mes-hall

keywords metalliclocalizationweakbehaviorcoexistencemagnetoresistivityphasequantum

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Magnetoresistivity measurements on p-type Si/SiGe quantum wells reveal the coexistence of a metallic behavior and weak localization. Deep in the metallic regime, pronounced weak localization reduces the metallic behavior around zero magnetic field without destroying it. In the insulating phase, a positive magnetoresistivity emerges close to B=0, possibly related to spin-orbit interactions.

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Coexistence of Weak Localization and a Metallic Phase in Si/SiGe Quantum Wells

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