Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

(2) Cavendish Laboratory; A.R. Hamilton (1); Australia; D.A. Ritchie (2). ((1)Now at: Semiconductor Nanofabrication Facility; E.H. Linfield (2); M. Pepper (2); M.Y. Simmons (1); P.D. Rose (2); The University of New South Wales; U.K.)

arxiv: cond-mat/9910368 · v2 · submitted 1999-10-22 · ❄️ cond-mat.mes-hall

Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

M.Y. Simmons (1) , A.R. Hamilton (1) , M. Pepper (2) , E.H. Linfield (2) , P.D. Rose (2) , D.A. Ritchie (2). ((1)Now at: Semiconductor Nanofabrication Facility , The University of New South Wales , Australia

show 3 more authors

(2) Cavendish Laboratory University of Cambridge U.K.)

This is my paper

classification ❄️ cond-mat.mes-hall

keywords highmetallicweakdimensionshole-holeinteractionslocalisationphase

0 comments

read the original abstract

A detailed investigation of the metallic behaviour in high quality GaAs-AlGaAs two dimensional hole systems reveals the presence of quantum corrections to the resistivity at low temperatures. Despite the low density ($r_{s}>10$) and high quality of these systems, both weak localisation (observed via negative magnetoresistance) and weak hole-hole interactions (giving a correction to the Hall constant) are present in the so-called metallic phase where the resistivity decreases with decreasing temperature. The results suggest that even at high $r_{s}$ there is no metallic phase at T=0 in two dimensions.

This paper has not been read by Pith yet.

Weak localisation, hole-hole interactions and the "metal"-insulator transition in two dimensions

discussion (0)