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Classical solutions of drift-diffusion equations for semiconductor devices: the 2d case
Analysis of PDEs · Submitted 4 Jan 2007
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces.
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The abstract, sentence by sentence
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes. This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces. In particular, it turns out that the divergence of the electron and hole current is an integrable function. Hence, Gauss' theorem applies, and gives the foundation for space discretization of the equations by means of finite volume schemes. Moreover, the strong differentiability of the electron and hole density in time is constitutive for the implicit time discretization scheme. Finite volume discretization of space, and implicit time discretization are accepted custom in engineering and scientific computing.--This investigation puts special emphasis on non-smooth spatial domains, mixed boundary conditions, and heterogeneous material compositions, as required in electronic device simulation.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. | background 0.63 | 0.75 | 0.04 | asserted 0.89 |
| s1 | To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes. | method 0.78 | 0.89 | 0.07 | asserted 0.99 |
| s2 | This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces. | result 0.62 | 0.51 | 0.29 | asserted 0.87 |
| s3 | In particular, it turns out that the divergence of the electron and hole current is an integrable function. | result 0.98 | 0.82 | 0.14 | asserted 1.00 |
| s4 | Hence, Gauss' theorem applies, and gives the foundation for space discretization of the equations by means of finite volume schemes. | interpretation 0.70 | 0.70 | 0.10 | asserted 1.00 |
| s5 | Moreover, the strong differentiability of the electron and hole density in time is constitutive for the implicit time discretization scheme. | result 0.45 | 0.60 | 0.06 | asserted 1.00 |
| s6 | Finite volume discretization of space, and implicit time discretization are accepted custom in engineering and scientific computing.--This investigation puts special emphasis on non-smooth spatial domains, mixed boundary conditions, and heterogeneous material compositions, as required in electronic device simulation. | contribution 0.84 | 0.34 | 0.11 | asserted 0.99 |
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Original abstract
We regard drift-diffusion equations for semiconductor devices in Lebesgue spaces. To that end we reformulate the (generalized) van Roosbroeck system as an evolution equation for the potentials to the driving forces of the currents of electrons and holes. This evolution equation falls into a class of quasi-linear parabolic systems which allow unique, local in time solution in certain Lebesgue spaces. In particular, it turns out that the divergence of the electron and hole current is an integrable function. Hence, Gauss' theorem applies, and gives the foundation for space discretization of the equations by means of finite volume schemes. Moreover, the strong differentiability of the electron and hole density in time is constitutive for the implicit time discretization scheme. Finite volume discretization of space, and implicit time discretization are accepted custom in engineering and scientific computing.--This investigation puts special emphasis on non-smooth spatial domains, mixed boundary conditions, and heterogeneous material compositions, as required in electronic device simulation.
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