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Semiconductor resonator solitons above band gap
Pattern Formation and Solitons · Submitted 8 May 2001
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy.
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The abstract, sentence by sentence
We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy. These solitons can be switched on, both spontaneously and with address pulses, without the thermal delay found for solitons below the band gap which is unfavorable for applications. The differences between soliton properties above and below gap energy are discussed.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy. | result 0.88 | 0.95 | 0.82 | asserted 1.00 |
| s1 | These solitons can be switched on, both spontaneously and with address pulses, without the thermal delay found for solitons below the band gap which is unfavorable for applications. | result 0.94 | 0.84 | 0.27 | asserted 0.71 |
| s2 | The differences between soliton properties above and below gap energy are discussed. | contribution 0.73 | 0.58 | 0.07 | unclear 0.75 |
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The paper
Original abstract
We show experimentally the existence of bright and dark spatial solitons in semiconductor resonators for excitation above the band gap energy. These solitons can be switched on, both spontaneously and with address pulses, without the thermal delay found for solitons below the band gap which is unfavorable for applications. The differences between soliton properties above and below gap energy are discussed.
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