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Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser

Optics · Submitted 26 Jun 2006

abstract compiled · 2026-09-23 · no language-model review

The authors' main claim This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser.

how it is stated · asserted 1.00 read the record →

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arXiv IDphysics/0606211 (version 1)
Pith IDOJFJMQYL, Pith's permanent record of this paper and its review
CitationArnaud Garnache (CEM2), Gaelle Lucas-Leclin (LCFIO), Isabelle Sagnes (LPN), Julie Dion (LPN), Manuela Domenech (LCFIO), Martin Strassner (LPN), Mathieu Jacquemet (LCFIO), Patrick Georges (LCFIO). "Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser." arXiv:physics/0606211 (2006). https://pith.science/paper/OJFJMQYL
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The compiled record

The paper's own sentences, arranged. Each label is drawn from a closed vocabulary; the number beside it is the probability the classifier gave that label. Numbers in the tables are the authors', checked by code. No sentence in this record was written by a model.

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Compiled by classifier-1.13.0 via TypeSafe API, question bank abstract-p1-20260923, 2026-09-23: 1 request, 3,624 input tokens.

What the abstract itself states, as probabilities: claims first 0.03 · states limitation 0.07 · human participants 0.02 · controlled comparison 0.03 · randomized assignment 0.01 · states quantitative result 0.99 · compares with prior results 0.10 · mentions code or data availability 0.01.

The abstract, sentence by sentence

arXiv listing abstract v1. Results and the main claim are underlined; .

This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.

background contribution method result interpretation main claim

What the classifier reports for each sentence. The number is the probability it gave the label.
#sentencerolethe authors' own workstates the main conclusionstrength
s0 This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. contribution 0.52 0.95 0.65 asserted 1.00
s1 By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. method 0.47 0.96 0.38 asserted 1.00
s2 The spectro-temporal dynamics of the laser is also explained. contribution 0.64 0.75 0.05 asserted 0.97
s3 Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW. result 0.87 0.93 0.17 asserted 1.00

What kind of paper the classifier reports this is: empirical study 0.99 · evidence from observation or experiment 1.00.

What was examined, and what was not

sources read
  • arXiv listing abstract v1
not examined
  • full text
  • figures and tables
  • references and citing sentences
  • relations to other papers
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  • P abstract
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  • S sections
  • T body sentences
  • C citations
  • R cross-paper relations

Every quoted sentence on this record is the authors'. Every label is from Pith's closed vocabulary, with the probability shown beside it. Every number in the measurements table is the authors', checked by code. Record as JSON

The paper
Original abstract

This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.

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