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Single-Frequency High-Power Continuous-Wave Oscillation at 1003 nm of an Optically Pumped Semiconductor Laser
Optics · Submitted 26 Jun 2006
abstract compiled · 2026-09-23 · no language-model review
The authors' main claim This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser.
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The abstract, sentence by sentence
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.
background contribution method result interpretation main claim
| # | sentence | role | the authors' own work | states the main conclusion | strength |
|---|---|---|---|---|---|
| s0 | This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. | contribution 0.52 | 0.95 | 0.65 | asserted 1.00 |
| s1 | By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. | method 0.47 | 0.96 | 0.38 | asserted 1.00 |
| s2 | The spectro-temporal dynamics of the laser is also explained. | contribution 0.64 | 0.75 | 0.05 | asserted 0.97 |
| s3 | Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW. | result 0.87 | 0.93 | 0.17 | asserted 1.00 |
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The paper
Original abstract
This work reports single-frequency laser oscillation at 1003.4 nm of an optically pumped external cavity semiconductor laser. By using a gain structure bonded onto a high conductivity substrate, we demonstrate both theoretically and experimentally the strong reduction of the thermal resistance of the active semiconductor medium, resulting in a high power laser emission. The spectro-temporal dynamics of the laser is also explained. Furthermore, an intracavity frequency-doubling crystal was used to obtain a stable single-mode generation of blue (501.5 nm) with an output power around 60 mW.
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