pith:NRGCNMQN
Interface-Driven Growth Mode Control of 2D GaSe on 3D GaAs Substrates with Distinct Crystallographic Orientations
GaAs substrate preparation controls whether 2D GaSe grows tilted or flat by tuning interface dangling-bond coordination.
arxiv:2602.12899 v2 · 2026-02-13 · cond-mat.mtrl-sci
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\pithnumber{NRGCNMQNSKGXREDJQVFSGZNVTH}
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Claims
Our results resolve the mechanistic origin of tilted versus non-tilted 2D growth and establish a general interface-driven orientation selection rule linking substrate symmetry and dangling-bond coordination to layered heteroepitaxy.
The assumption that observed differences in morphology arise primarily from substrate preparation methods rather than uncontrolled variables such as exact growth temperature, flux ratios, or residual contaminants, and that results on these two orientations generalize to a broad selection rule.
Substrate surface preparation controls whether 2D GaSe grows tilted or flat on GaAs, establishing an interface-driven orientation selection rule based on substrate symmetry and dangling-bond coordination.
Formal links
Receipt and verification
| First computed | 2026-05-18T03:10:03.551922Z |
|---|---|
| Builder | pith-number-builder-2026-05-17-v1 |
| Signature | Pith Ed25519
(pith-v1-2026-05) · public key |
| Schema | pith-number/v1.0 |
Canonical hash
6c4c26b20d928d789069854b2365b599dc39684406db87c3b91b7b99f156fc51
Aliases
· · · · ·Agent API
Verify this Pith Number yourself
curl -sH 'Accept: application/ld+json' https://pith.science/pith/NRGCNMQNSKGXREDJQVFSGZNVTH \
| jq -c '.canonical_record' \
| python3 -c "import sys,json,hashlib; b=json.dumps(json.loads(sys.stdin.read()), sort_keys=True, separators=(',',':'), ensure_ascii=False).encode(); print(hashlib.sha256(b).hexdigest())"
# expect: 6c4c26b20d928d789069854b2365b599dc39684406db87c3b91b7b99f156fc51
Canonical record JSON
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