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C. Gould

Identifiers

  • name variant C. Gould 0.60 · backfill

Papers (44)

  1. Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics cond-mat.mes-hall · 2017 · author #7
  2. Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect cond-mat.mes-hall · 2017 · author #6
  3. Room-temperature spin-orbit torque in NiMnSb cond-mat.mtrl-sci · 2015 · author #6
  4. Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state cond-mat.mes-hall · 2015 · author #5
  5. Magneto-optics of massive Dirac fermions in bulk Bi2Se3 cond-mat.mes-hall · 2015 · author #14
  6. Suppressing twin formation in Bi2Se3 thin films cond-mat.mtrl-sci · 2015 · author #8
  7. Removal of GaAs growth substrates from II-VI semiconductor heterostructures cond-mat.mtrl-sci · 2013 · author #6
  8. Shot Noise in Lithographically Patterned Graphene Nanoribbons cond-mat.mes-hall · 2013 · author #5
  9. Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates cond-mat.mtrl-sci · 2013 · author #8
  10. Quantum Hall effect in narrow graphene ribbons cond-mat.mes-hall · 2012 · author #4
  11. Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions cond-mat.mes-hall · 2011 · author #8
  12. Magnetic field-induced exchange effects between Mn ions and free carriers in ZnSe quantum well through the intermediate nonmagnetic barrier studied by photoluminescence cond-mat.mes-hall · 2010 · author #5
  13. Zero field spin polarization in a 2D paramagnetic resonant tunneling diode cond-mat.mes-hall · 2010 · author #2
  14. Fully electrically read-write device out of a ferromagnetic semiconductor cond-mat.mes-hall · 2010 · author #6
  15. Tunneling anisotropic magnetoresistance in organic spin valves cond-mat.mtrl-sci · 2009 · author #4
  16. Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer cond-mat.mes-hall · 2009 · author #2
  17. Fermi-edge Singularity in II-VI Semiconductor Resonant Tunneling Structures cond-mat.mes-hall · 2009 · author #3
  18. Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system cond-mat.mes-hall · 2008 · author #2
  19. Non-thermal photocoercivity effect in a ferromagnetic semiconductor cond-mat.mtrl-sci · 2008 · author #7
  20. Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As cond-mat.mes-hall · 2008 · author #2
  21. An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material cond-mat.mes-hall · 2008 · author #1
  22. On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover cond-mat.mtrl-sci · 2007 · author #15
  23. Bound hole states in a ferromagnetic (Ga,Mn)As environment cond-mat.mtrl-sci · 2007 · author #3
  24. Resonant tunneling diode with spin polarized injector cond-mat.mes-hall · 2007 · author #2
  25. Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation cond-mat.mes-hall · 2007 · author #2
  26. Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device cond-mat.mes-hall · 2007 · author #3
  27. Lithographic engineering of anisotropies in (Ga,Mn)As cond-mat.mes-hall · 2006 · author #6
  28. Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As cond-mat.mes-hall · 2006 · author #5
  29. Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device cond-mat.str-el · 2006 · author #7
  30. Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices cond-mat.mes-hall · 2006 · author #1
  31. Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy cond-mat.mtrl-sci · 2005 · author #5
  32. Self Assembled II-VI Magnetic Quantum Dot as a Voltage-Controlled Spin-Filter cond-mat.mes-hall · 2005 · author #1
  33. Temperature Dependent Magnetic Anisotropy in (Ga,Mn)As Layers cond-mat.mtrl-sci · 2004 · author #7
  34. Molecular-beam epitaxy of (Zn,Mn)Se on Si(100) cond-mat.mtrl-sci · 2004 · author #5
  35. 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack cond-mat.mes-hall · 2004 · author #2
  36. Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions cond-mat.mes-hall · 2003 · author #3
  37. Voltage-Controlled Spin Selection in a Magnetic Resonant Tunnelling Diode cond-mat.mes-hall · 2003 · author #2
  38. Spin injection in the non-linear regime: band bending effects cond-mat.mes-hall · 2002 · author #2
  39. Large magnetoresistance effect due to spin-injection into a non-magnetic semiconductor cond-mat.mes-hall · 2001 · author #4
  40. Spin filtering and magnetoresistance in ballistic tunnel junctions cond-mat.mes-hall · 2001 · author #2
  41. The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy cond-mat.mes-hall · 1999 · author #4
  42. Solar Fusion Cross Sections astro-ph · 1998 · author #16
  43. Fractal Conductance Fluctuations in a Soft Wall Stadium and a Sinai Billiard cond-mat.mes-hall · 1997 · author #3
  44. Resonance Patterns of an Antidot Cluster: From Classical to Quantum Ballistics cond-mat.mes-hall · 1997 · author #4

Mentions

  • 1302.3397 #8 · backfill · confidence 0.70 C. Gould
  • 1205.5144 #4 · backfill · confidence 0.70 C. Gould
  • 1110.6339 #8 · backfill · confidence 0.70 C. Gould
  • 1101.0251 #5 · backfill · confidence 0.70 C. Gould
  • 1012.4261 #2 · backfill · confidence 0.70 C. Gould
  • 1012.4252 #6 · backfill · confidence 0.70 C. Gould
  • 0905.4573 #4 · backfill · confidence 0.70 C. Gould
  • 0901.3210 #2 · backfill · confidence 0.70 C. Gould
  • 0901.1568 #3 · backfill · confidence 0.70 C. Gould
  • 0812.0455 #2 · backfill · confidence 0.70 C. Gould
  • 0810.4027 #7 · backfill · confidence 0.70 C. Gould
  • 0802.4400 #2 · backfill · confidence 0.70 C. Gould
  • 0802.4206 #1 · backfill · confidence 0.70 C. Gould
  • 0707.0665 #15 · backfill · confidence 0.70 C. Gould
  • 0704.2028 #3 · backfill · confidence 0.70 C. Gould

Frequent Coauthors