Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

C. Gould; C. Ruester; E. Girgis; G. Schmidt; J. Liu; L.W. Molenkamp; P. Bach

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Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

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arxiv cond-mat/0509538 v1 pith:N3YXKU3N submitted 2005-09-21 cond-mat.mtrl-sci cond-mat.mes-hall

J. Liu , E. Girgis , P. Bach , C. Ruester , C. Gould , G. Schmidt , L.W. Molenkamp This is my paper · ORCID

classification cond-mat.mtrl-scicond-mat.mes-hall

keywords layermagnetoresistancenimnsbanisotropyepitaxialjunctionsswitchinguniaxial

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We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2K. The layers show clear separate switching and a small ferromagnetic coupling. A uniaxial in plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications.

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