Gate-tunable AMR persists down to two layers in NiPS3, enabling electrical readout of the Néel vector in ultrathin vdW antiferromagnets.
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Persistence of large and gate-tunable anisotropic magnetoresistance in an atomically thin antiferromagnet
Gate-tunable AMR persists down to two layers in NiPS3, enabling electrical readout of the Néel vector in ultrathin vdW antiferromagnets.