The work introduces a c-AFM-based technique to characterize nanoscale strain-induced conductivity changes in TMDs, compares them to MD simulations, and quantifies shifts in effective mass, charge density, and Schottky barrier height.
Strain Engineered high responsivity MoTe2 photodetectors for Si photonic integrated circuits
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Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale
The work introduces a c-AFM-based technique to characterize nanoscale strain-induced conductivity changes in TMDs, compares them to MD simulations, and quantifies shifts in effective mass, charge density, and Schottky barrier height.