Disorder induces a crossover from phase-averaging to mode-mixing regimes in domain wall transport of a second-order topological insulator, marked by a 0.5 e²/h plateau and two-step conductance fluctuations at 0.35 and 0.29 e²/h with corresponding Fano factors of 1/4 and 1/3.
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Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.
This is a review summarizing existing extensions of the SSH model to higher dimensions, larger unit cells, and additional terms, with case studies of their topological properties.
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Disorder-induced crossover from phase-averaging to mode-mixing regimes in magnetic domain walls of a second-order topological insulator
Disorder induces a crossover from phase-averaging to mode-mixing regimes in domain wall transport of a second-order topological insulator, marked by a 0.5 e²/h plateau and two-step conductance fluctuations at 0.35 and 0.29 e²/h with corresponding Fano factors of 1/4 and 1/3.
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Bismuth Films on EuO(111) as a Platform for Proximity-Induced Topological States
Epitaxial bilayer bismuth on EuO(111) forms a stabilized alpha-phase bismuthene with a robust 400 meV gap and boundary-localized states consistent with a room-temperature quantum spin Hall phase.
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Exploring topological phases with extended Su-Schrieffer-Heeger models
This is a review summarizing existing extensions of the SSH model to higher dimensions, larger unit cells, and additional terms, with case studies of their topological properties.