A cryogenic uniaxial strain cell for homogeneous straining of thick square semiconductor quantum chips, validated experimentally to 215 microstrain at 200 V on a silicon die.
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2026 2verdicts
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Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.
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A Cryogenic Uniaxial Strain Cell for Quantum Devices
A cryogenic uniaxial strain cell for homogeneous straining of thick square semiconductor quantum chips, validated experimentally to 215 microstrain at 200 V on a silicon die.
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Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.