Gapless 1D edge states in TRS topological insulators exhibit significantly larger bilinear magnetoelectric resistance than 2D systems due to spin-momentum locking combined with random spin-orbit interaction, without requiring gap opening.
Magnetochiral anisotropy on a quantum spin hall edge,
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Topological fragility and bilinear magnetoelectric resistance in gapless edge states
Gapless 1D edge states in TRS topological insulators exhibit significantly larger bilinear magnetoelectric resistance than 2D systems due to spin-momentum locking combined with random spin-orbit interaction, without requiring gap opening.