Demonstrated gate-tunable supercurrents in Josephson junctions on Ge quantum wells with Ic >100 nA and IcRn=8.63 μV using in-situ Al contacts and deep mesa etch for low-loss integration.
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Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.
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Voltage-tunable Josephson Junctions on Germanium Quantum Wells with in-situ Aluminum Contacts
Demonstrated gate-tunable supercurrents in Josephson junctions on Ge quantum wells with Ic >100 nA and IcRn=8.63 μV using in-situ Al contacts and deep mesa etch for low-loss integration.
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Impact of surface treatments on the transport properties of germanium 2DHGs
Oxygen plasma treatment on Ge heterostructures reduces interface trap density from the Si cap, improving mobility and lowering percolation density in 2DHGs compared with HF etching.