Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.
Ultrahigh-mobility graphene devices from chem- ical vapor deposition on reusable copper
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Cryogenic Graphene-Based Phase Modulators for Quantum Information Processing
Cryogenic dual-layer graphene phase modulators on SiN waveguides achieve insertion losses below 0.3 dB, modulation lengths under 50 μm, and GHz bandwidths via geometry and material optimization.