pith. sign in

Title resolution pending

6 Pith papers cite this work. Polarity classification is still indexing.

6 Pith papers citing it

years

2026 5 2025 1

verdicts

UNVERDICTED 6

clear filters

representative citing papers

Temperature-induced optical enhancement near a localization transition

cond-mat.dis-nn · 2026-05-20 · unverdicted · novelty 6.0

Finite temperature strongly enhances low-frequency optical conductivity near the localization transition in the Aubry-André model via thermal activation of Pauli-blocked transitions between resonant van Hove singularities.

Metalization of topological insulators

cond-mat.mes-hall · 2026-04-29 · unverdicted · novelty 6.0

Impurity-scattering-induced coherence decay produces finite longitudinal conductivity in Berry-curvature-dominated topological insulators without Fermi-level carriers, with linear impurity scaling and 1/T temperature dependence.

Beyond Variational Bias: Resolving Intertwined Orders in the Hubbard Model

cond-mat.str-el · 2026-04-23 · unverdicted · novelty 6.0

Three Transformer backflow fermionic wave functions for the finite-doping Hubbard model converge, after accuracy improvements, to the same state with coexisting superconducting and stripe orders, demonstrating that variational energy is insufficient to identify the ground state.

Superconductivity and geometric superfluid weight of a tunable flat band system

cond-mat.supr-con · 2025-12-10 · unverdicted · novelty 6.0

In the α-T3 lattice with on-site asymmetry, mean-field theory shows a superconducting gap that grows as a power law with interaction strength at flat-band filling, while the geometric part of the superfluid weight grows linearly and is enhanced by tuning α.

citing papers explorer

Showing 1 of 1 citing paper after filters.

  • Metalization of topological insulators cond-mat.mes-hall · 2026-04-29 · unverdicted · none · ref 5

    Impurity-scattering-induced coherence decay produces finite longitudinal conductivity in Berry-curvature-dominated topological insulators without Fermi-level carriers, with linear impurity scaling and 1/T temperature dependence.