Demonstration of synchronized laser addressing that achieves site-selective Rz gates with 94.6% fidelity and 1.2% crosstalk in rotating 9Be+ Penning-trap crystals, including biskyrmion textures and layer-selective operations.
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Programmable site-selective spin control in rotating Penning-trap ion crystals
Demonstration of synchronized laser addressing that achieves site-selective Rz gates with 94.6% fidelity and 1.2% crosstalk in rotating 9Be+ Penning-trap crystals, including biskyrmion textures and layer-selective operations.