An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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2 Pith papers cite this work. Polarity classification is still indexing.
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2026 2verdicts
UNVERDICTED 2representative citing papers
Unsupervised multi-channel DIP-TV reconstructs near-isotropic 3D elemental maps from limited-angle EDX tomography data using only EDX signals, applied to GST memory devices in virgin and SET states.
citing papers explorer
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Optically programmable and erasable cryogenic flash memory on an undoped Si/SiGe heterostructure
An undoped Si/SiGe HFET achieves optically programmable non-volatile memory with >10^3 cycle endurance and >10^4 s retention at 1.5 K by locking threshold voltage via high interface trap density.
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Unsupervised Deep Learning for Limited-Angle STEM-EDX Tomography -- Application to 3D Chemical Analysis of Phase-Change Memory Devices
Unsupervised multi-channel DIP-TV reconstructs near-isotropic 3D elemental maps from limited-angle EDX tomography data using only EDX signals, applied to GST memory devices in virgin and SET states.