An electrically-injected GaN waveguide polariton laser operates at room temperature in mode-locked regime, breaking the transparency condition and enabling short cavities with partial injection.
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Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.
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Electrically-injected room-temperature waveguide polariton laser
An electrically-injected GaN waveguide polariton laser operates at room temperature in mode-locked regime, breaking the transparency condition and enabling short cavities with partial injection.
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Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.