Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.
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Barrier-channel intermixing and 2-dimensional electron gas degradation in Al-rich Al(Ga)N/AlGaN high electron mobility transistor heterostructures
Improved MOVPE growth reduces alloy intermixing in Al-rich AlGaN/AlGaN heterostructures, enabling 2DEG with ~2500 Ω/□ sheet resistivity assessed non-destructively by XRD.