Inverted-mode STM achieves controlled C2 donation to pre-patterned sites on hydrogenated Si(100), enabling single-site, multi-site, and stepwise polyyne assembly.
Chatterjee , author P
5 Pith papers cite this work. Polarity classification is still indexing.
citation-role summary
citation-polarity summary
years
2026 5verdicts
UNVERDICTED 5roles
background 1polarities
background 1representative citing papers
First-principles calculations identify a novel band alignment at low Ge concentrations preventing 2DEG but allowing 2DHG at s-Si/SiGe interfaces, with confined states and anisotropic masses.
Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
Spin-qubit operation is framed as a modular automation problem with five modules to enable scalable stable arrays via interfaces, standardized data products, and workflow metrics.
Nonlinear elasticity appears in InP nanocrystals at high optical fluence as sum- and difference-frequency generation in acoustic modes, correlated with oxidation and confirmed by time-resolved XRD.
citing papers explorer
-
Atomically precise mechanosynthesis of carbon structures on hydrogenated Si(100) by inverted-mode STM
Inverted-mode STM achieves controlled C2 donation to pre-patterned sites on hydrogenated Si(100), enabling single-site, multi-site, and stepwise polyyne assembly.
-
Nonlinear Elasticity at the Damage Threshold of Semiconductor Nanocrystals
Nonlinear elasticity appears in InP nanocrystals at high optical fluence as sum- and difference-frequency generation in acoustic modes, correlated with oxidation and confirmed by time-resolved XRD.