Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
Title resolution pending
4 Pith papers cite this work. Polarity classification is still indexing.
verdicts
UNVERDICTED 4representative citing papers
Integrating repetition code QEC with logical GHZ entanglement in CMOS spin qubits reduces effective dephasing and enables up to order-of-magnitude improvements in sensitivity to axion-electron coupling g_ae by restoring entanglement-enhanced sensing.
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
Theoretical study of flopping-mode qubits in Si/SiGe showing that high-fidelity operation is achievable across valley configurations when pulses are tuned for weak noise or when valley splittings are large and phase differences small for strong noise.
citing papers explorer
-
Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
-
Quantum Error Correction Assisted Axion Search in CMOS Spin Qubit Arrays
Integrating repetition code QEC with logical GHZ entanglement in CMOS spin qubits reduces effective dephasing and enables up to order-of-magnitude improvements in sensitivity to axion-electron coupling g_ae by restoring entanglement-enhanced sensing.
-
Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
-
The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Theoretical study of flopping-mode qubits in Si/SiGe showing that high-fidelity operation is achievable across valley configurations when pulses are tuned for weak noise or when valley splittings are large and phase differences small for strong noise.