Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
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Integrating repetition code QEC with logical GHZ entanglement in CMOS spin qubits reduces effective dephasing and enables up to order-of-magnitude improvements in sensitivity to axion-electron coupling g_ae by restoring entanglement-enhanced sensing.
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
Theoretical study of flopping-mode qubits in Si/SiGe showing that high-fidelity operation is achievable across valley configurations when pulses are tuned for weak noise or when valley splittings are large and phase differences small for strong noise.
citing papers explorer
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Spin Qubit Leapfrogging: Dynamics of shuttling electrons on top of another
Mobile spin qubits in silicon can leapfrog over occupied dots by exploiting low valley splitting, enabling new connectivity routes and SWAP^γ entangling gates.
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Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
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The effects of alloy disorder on strongly-driven flopping mode qubits in Si/SiGe
Theoretical study of flopping-mode qubits in Si/SiGe showing that high-fidelity operation is achievable across valley configurations when pulses are tuned for weak noise or when valley splittings are large and phase differences small for strong noise.