Sb incorporation during nanowire growth suppresses rotational twins and enables abrupt axial InGaAs quantum dots yielding single-photon emission with g^(2)(0)<0.4 and ~0.5 ns lifetimes.
H.; Jagadish, C.; Wang, Z
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Monolithic axial InGaAs quantum dot emitters in GaAs-based nanowires via Sb-mediated facet engineering
Sb incorporation during nanowire growth suppresses rotational twins and enables abrupt axial InGaAs quantum dots yielding single-photon emission with g^(2)(0)<0.4 and ~0.5 ns lifetimes.