Derives a reversible Seebeck model from drift-diffusion plus Soret effect that recovers a lower-bound band term, keeps standard phonon-drag form, and matches n-doped silicon experiments better than ballistic alternatives in the near-equilibrium limit.
Bell, Cooling, Heating, Generating Power, and Recovering Waste Heat with Thermoelectric Systems, Science, 321 (2008) 1457–1461
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DFT study of novel K2SnGeX6 and Rb2SnGeX6 (X=Cl,Br,I) predicts cubic stability, direct bandgaps 0.64-1.44 eV, ductility, and ZT up to 2.4 at 1000 K for K2SnGeI6.
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Revisiting Theoretical Modeling of Seebeck Coefficient of Semiconductors
Derives a reversible Seebeck model from drift-diffusion plus Soret effect that recovers a lower-bound band term, keeps standard phonon-drag form, and matches n-doped silicon experiments better than ballistic alternatives in the near-equilibrium limit.