In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.
citing papers explorer
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Atom-selective spin-polarized transport in a charge-ordered altermagnet
In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet
In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
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Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
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Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.