Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
Pith reviewed 2026-05-10 08:35 UTC · model grok-4.3
The pith
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.
A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.
Core claim
We propose an uncompensated ferrimagnetic monolayer VCrSeTeO to achieve large intrinsic valley polarization. Spin-orbit coupling (SOC) is shown to further increase the valley polarization to over 400 meV under uniaxial strains and the reason is explained in terms of SOC perturbation theorem. Furthermore, we reveal a distinctive anomalous valley Hall effect in which the valley Hall voltage is reversed within the same valley in ferrimagnet VCrSeTeO.
Load-bearing premise
The central claims rest on the assumption that density-functional-theory calculations accurately capture the magnetic ordering, valley polarization, and strain response in the proposed VCrSeTeO monolayer without experimental confirmation or higher-level methods to validate the large SOC-enhanced values.
Figures
read the original abstract
Altermagnets (AMs) and fully compensated ferrimagnets (FC-FIMs) are emerging classes of magnetic materials that combine the advantages of antiferromagnets and ferromagnets. Here, we elucidate the mechanism behind the uniaxial strain-driven transformation from AM to FC-FIM and find that the accompanying non-relativistic valley polarization is positively correlated with the net magnetic moment between magnetic atoms in opposite spin sublattices. We then propose an uncompensated ferrimagnetic monolayer VCrSeTeO to achieve large intrinsic valley polarization. Spin-orbit coupling (SOC) is shown to further increase the valley polarization to over 400 meV under uniaxial strains and the reason is explained in terms of SOC perturbation theorem. Furthermore, we reveal a distinctive anomalous valley Hall effect in which the valley Hall voltage is reversed within the same valley in ferrimagnet VCrSeTeO. This work proposes a strategy for realizing giant valley polarization and provides theoretical guidance for the application of ferrimagnetic ferrovalley semiconductors derived from altermagnets in valleytronics.
Editorial analysis
A structured set of objections, weighed in public.
Circularity Check
No significant circularity; results from direct DFT computations on proposed material.
full rationale
The paper's central claims rest on explicit first-principles DFT calculations of the electronic structure, magnetic ordering, and Berry curvature in the proposed VCrSeTeO monolayer under strain. The positive correlation between non-relativistic valley polarization and net magnetic moment emerges numerically from those calculations across configurations rather than being imposed by definition or fitting. The >400 meV SOC-enhanced value is a direct output of PBE+SOC runs, with the perturbation-theorem explanation serving as post-hoc interpretation rather than a load-bearing derivation step. No self-citation chain, ansatz smuggling, or renaming of known results is required for the quantitative predictions; the anomalous valley Hall reversal follows from computed quantities. The derivation is therefore self-contained against standard DFT methodology and does not reduce to its inputs by construction.
Axiom & Free-Parameter Ledger
free parameters (2)
- uniaxial strain magnitude
- Hubbard U or similar correlation parameters
axioms (2)
- domain assumption Density functional theory with chosen functionals and parameters accurately reproduces the magnetic ground state and electronic band structure of the proposed monolayer.
- domain assumption The SOC perturbation theorem applies directly to explain the increase in valley polarization under strain.
Reference graph
Works this paper leans on
-
[1]
Introduction Traditional collinear magnetic materials are categorized into ferromagnets (FM), ferrimagnets (FIM), and antiferromagnets (AFM). Their key distinction lies in the magnitude and orientation of magnetic moments in different spin sublattices [1]. Recently, two specific classes of collinear magnetic materials —characterized by zero net magnetic m...
-
[2]
A plane-wave cutoff energy of 560 eV is used consistently throughout the calculations
Computational methods Vienna ab initio simulation package (V ASP) [38] based on density functional theory is used in the calculations, where the projector augmented wave method [39] and the Perdew-Burke-Ernzerhof (PBE) [40] exchange-correlation functional within the generalized gradient approximation are employed. A plane-wave cutoff energy of 560 eV is u...
-
[3]
Results and Discussion Monolayers V 2Se2O and Janus V 2SeTeO are identified as prototypical two - dimensional AMs. Their hallmark feature —uniaxial strain -driven nonrelativistic valley polarization (defined as Δ𝐸𝑐(𝑣) = 𝐸𝑐(𝑣)(X) − 𝐸𝑐(𝑣)(Y) )—renders these tetragonal monolayers as prominent piezovalley materials [9,42]. Top and side views of monolayers V 2...
-
[4]
magnetization, while the band with [001] magnetization shows nearly unchanged valley polarization. This phenomenon demonstrates that SOC also exerts a significant impact on valley polarization when magnetizations are oriented along [010] and [100]. Especially, [010] magnetization enhances the valley polarization by nearly 30%, yielding a valley polarizati...
-
[5]
+ 𝜆 2 𝑆̂−′ (−𝐿̂ 𝑧 𝑠𝑖𝑛 𝜃 + 𝐿̂ +𝑒−𝑖𝜑 𝑐𝑜𝑠2 𝜃 2 − 𝐿̂ −𝑒𝑖𝜑 𝑠𝑖𝑛2 𝜃
-
[6]
, where 𝛨̂ 𝑆𝑂𝐶 and 𝛨̂ 𝑆𝑂𝐶 ′ are spin-conserving and spin-non-conserving SOC Hamiltonian, respectively, 𝜆 represents the SOC coefficient, 𝑆̂𝑧′ and 𝐿̂ 𝑧 represent the 𝑧′ or z components of spin and orbital angular momentum, respectively, 𝜃 and 𝜑 are the polar angle and azimuthal angle of the spin, respectively, and the ladder operators are given by 𝐿̂ ± = 𝐿...
-
[7]
directions, respectively. The MAE is expressed as 𝐸[001] − 𝐸[010] = 463.08 μeV, indicating that an external magnetic field can readily switch the magnetization from the magnetic easy axis ([010] direction) to [001] and [001̄ ] directions. The band structures and the distribution of Berry curvature at high -symmetry points for magnetizations along [001] an...
-
[8]
Conclusion In summary, first-principles calculations reveal that the valley polarization induced by uniaxial strain in two -dimensional AMs correlates with the net magnetic moment between magnetic atoms belonging to opposite spin sublattices of FC -FIM. Based on this correlation, we propose a strategy for achieving giant valley polarization : substituting...
-
[9]
12504071), the Natural Science Foundation of Hunan Province (Grant No
Acknowledgments This work was supported by the National Natural Science Foundation of China (Grants No. 12504071), the Natural Science Foundation of Hunan Province (Grant No. 2026JJ60129), the Changsha Natural Science Foundation (Grant No. kg2502211), the National College Student Innovation Training Program Project ( Grant No. 202510554047), the Postdocto...
-
[10]
B. D. Cullity and C. D. Graham, Introduction to Magnetic Materials (John Wiley & Sons, 2011)
work page 2011
-
[11]
L. Šmejkal, J. Sinova, and T. Jungwirth, Beyond Conventional Ferromagnetism and Antiferromagnetism: A Phase with Nonrelativistic Spin and Crystal Rotation Symmetry, Phys. Rev. X 12, 031042 (2022)
work page 2022
-
[12]
L. Šmejkal, J. Sinova, and T. Jungwirth, Emerging Research Landscape of Altermagnetism, Phys. Rev. X 12, 040501 (2022)
work page 2022
- [13]
-
[14]
S.-D. Guo, Q. Luo, S. -H. Zhang, and P. Jiang, External field induced transition from altermagnetic metal to fully compensated ferrimagnetic metal in monolayer Cr 2 O, Phys. Rev. B 113, 064408 (2026)
work page 2026
- [15]
-
[16]
T. Jungwirth, X. Marti, P. Wadley, and J. Wunderlich, Antiferromagnetic spintronics, Nature Nanotech 11, 3 (2016)
work page 2016
-
[17]
T. Jungwirth, J. Sinova, A. Manchon, X. Marti, J. Wunderlich, and C. Felser, The multiple directions of antiferromagnetic spintronics, Nature Phys 14, 3 (2018)
work page 2018
-
[18]
H.-Y . Ma, M. Hu, N. Li, J. Liu, W. Yao, J. -F. Jia, and J. Liu, Multifunctional antiferromagnetic materials with giant piezomagnetism and noncollinear spin current, Nat. Commun. 12, 2846 (2021)
work page 2021
-
[19]
L. Šmejkal, R. González -Herná ndez, T. Jungwirth, and J. Sinova, Crystal time- reversal symmetry breaking and spontaneous Hall effect in collinear antiferromagnets, Sci. Adv. 6, eaaz8809 (2020)
work page 2020
- [20]
-
[21]
Yang et al., Altermagnet-Driven Magnon Spin Splitting Nernst Effect, Phys
Y . Yang et al., Altermagnet-Driven Magnon Spin Splitting Nernst Effect, Phys. Rev. Lett. 136, 026701 (2026)
work page 2026
-
[22]
A. Badura et al., Observation of the anomalous Nernst effect in altermagnetic candidate Mn5Si3, Nat Commun 16, 7111 (2025)
work page 2025
-
[23]
M. Su, D. Zhang, H. Ye, G. P. Zhang, M. Gu, and J. Wang, Interlayer -sliding controlled magneto -optical effect and ferrovalley in a fully compensated ferrimagnetic bilayer, Phys. Rev. B 112, 195427 (2025)
work page 2025
-
[24]
L. Bai, W. Feng, S. Liu, L. Šmejkal, Y . Mokrousov, and Y . Yao, Altermagnetism: Exploring New Frontiers in Magnetism and Spintronics, Adv. Funct. Mater. (2024)
work page 2024
-
[25]
S.-D. Guo, S. Chen, and G. Wang, Spin ordering induced fully compensated ferrimagnetism achieved in bilayers of Cr 2 C 2 S 6, Phys. Rev. B 112, 134430 (2025)
work page 2025
-
[26]
S.-D. Guo, J. He, and Y . S. Ang, Achieving fully compensated ferrimagnetism through two-dimensional CrI3/CrGeTe3 heterojunctions, Applied Physics Letters 127, 232401 (2025)
work page 2025
-
[27]
S.-D. Guo, W. Xu, Y . Xue, G. Zhu, and Y . S. Ang, Layer -locked anomalous valley Hall effect in a two -dimensional A -type tetragonal antiferromagnetic insulator, Phys. Rev. B 109, 134426 (2024)
work page 2024
-
[28]
S.-D. Guo, Y .-L. Tao, Z. -Y . Zhuo, G. Zhu, and Y . S. Ang, Electric -field-tuned anomalous valley Hall effect in A -type hexagonal antiferromagnetic monolayers, Phys. Rev. B 109, 134402 (2024)
work page 2024
-
[29]
Guo, Valley polarization in two -dimensional zero -net-magnetization magnets, Appl
S.-D. Guo, Valley polarization in two -dimensional zero -net-magnetization magnets, Appl. Phys. Lett. 126, 080502 (2025)
work page 2025
-
[30]
W.-Y . Tong, S.-J. Gong, X. Wan, and C. -G. Duan, Concepts of ferrovalley material and anomalous valley Hall effect, Nat Commun 7, 1 (2016)
work page 2016
-
[31]
D. Xiao, W. Yao, and Q. Niu, Valley-Contrasting Physics in Graphene: Magnetic Moment and Topological Transport, Phys. Rev. Lett. 99, 236809 (2007)
work page 2007
- [32]
-
[33]
K. F. Mak, K. He, J. Shan, and T. F. Heinz, Control of valley polarization in monolayer MoS2 by optical helicity, Nature Nanotech 7, 494 (2012)
work page 2012
-
[34]
Li et al., Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe 2, Phys
Y . Li et al., Valley Splitting and Polarization by the Zeeman Effect in Monolayer MoSe 2, Phys. Rev. Lett. 113, 266804 (2014)
work page 2014
-
[35]
D. MacNeill, C. Heikes, K. F. Mak, Z. Anderson, A. Kormá nyos, V . Zó lyomi, J. Park, and D. C. Ralph, Breaking of Valley Degeneracy by Magnetic Field in Monolayer MoSe 2, Phys. Rev. Lett. 114, 037401 (2015)
work page 2015
-
[36]
G. Aivazian, Z. Gong, A. M. Jones, R.-L. Chu, J. Yan, D. G. Mandrus, C. Zhang, D. Cobden, W. Yao, and X. Xu, Magnetic control of valley pseudospin in monolayer WSe2, Nature Phys 11, 148 (2015)
work page 2015
-
[37]
K. F. Mak, K. L. McGill, J. Park, and P. L. McEuen, The valley Hall effect in MoS 2 transistors, Science 344, 1489 (2014)
work page 2014
-
[38]
W.-T. Hsu, Optically initialized robust valley -polarized holes in monolayer WSe2, NATURE COMMUNICATIONS (2015)
work page 2015
-
[39]
H. Matsuoka, T. Habe, Y . Iwasa, M. Koshino, and M. Nakano, Spontaneous spin-valley polarization in NbSe2 at a van der Waals interface, Nat Commun 13, 5129 (2022)
work page 2022
-
[40]
Zhong et al., Layer -resolved magnetic proximity effect in van der Waals heterostructures, Nat
D. Zhong et al., Layer -resolved magnetic proximity effect in van der Waals heterostructures, Nat. Nanotechnol. 15, 187 (2020)
work page 2020
-
[41]
M. Abdollahi and M. B. Tagani, Tuning the magnetic properties of a VSe 2 monolayer via the magnetic proximity effect mediated by Zeeman -type spin - orbit interaction, Phys. Rev. B 108, 024427 (2023)
work page 2023
-
[42]
Gao et al., Layer Hall effect in a 2D topological axion antiferromagnet, Nature 595, 521 (2021)
A. Gao et al., Layer Hall effect in a 2D topological axion antiferromagnet, Nature 595, 521 (2021)
work page 2021
-
[43]
X. Li, T. Cao, Q. Niu, J. Shi, and J. Feng, Coupling the valley degree of freedom to antiferromagnetic order, Proc. Natl. Acad. Sci. U.S.A. 110, 3738 (2013)
work page 2013
- [44]
-
[45]
Y . Liu, J. Dong, G. Ni, and G. Gao, Universal strategy for spin and valley control: Electric-field-induced splitting and anomalous valley Hall effect in antiferromagnetic bilayers, Phys. Rev. B 113, 014422 (2026)
work page 2026
- [46]
-
[47]
G. Kresse and J. Furthmü ller, Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane -wave basis set, Computational Materials Science 6, 1 (1996)
work page 1996
-
[48]
P. E. Blö chl, Projector augmented-wave method, Phys. Rev. B 50, 24 (1994)
work page 1994
-
[49]
J. P. Perdew, K. Burke, and M. Ernzerhof, Generalized Gradient Approximation Made Simple, Phys. Rev. Lett. 77, 18 (1996)
work page 1996
-
[50]
S. L. Dudarev, G. A. Botton, S. Y . Savrasov, C. J. Humphreys, and A. P. Sutton, Electron-energy-loss spectra and the structural stability of nickel oxide: An LSDA+U study, Phys. Rev. B 57, 3 (1998)
work page 1998
-
[51]
Y . Zhu, T. Chen, Y . Li, L. Qiao, X. Ma, C. Liu, T. Hu, H. Gao, and W. Ren, Multipiezo Effect in Altermagnetic V 2 SeTeO Monolayer, Nano Lett. 24, 472 (2024)
work page 2024
-
[52]
X. Chen, D. Wang, L. Li, and B. Sanyal, Giant spin -splitting and tunable spin - momentum locked transport in room temperature collinear antiferromagnetic semimetallic CrO monolayer, Appl. Phys. Lett. 123, 022402 (2023)
work page 2023
-
[53]
S.-D. Guo, X. -S. Guo, K. Cheng, K. Wang, and Y . S. Ang, Piezoelectric altermagnetism and spin -valley polarization in Janus monolayer Cr2SO, Appl. Phys. Lett. 123, 082401 (2023)
work page 2023
-
[54]
N. Marzari, A. A. Mostofi, J. R. Yates, I. Souza, and D. Vanderbilt, Maximally localized Wannier functions: Theory and applications, Rev. Mod. Phys. 84, 1419 (2012)
work page 2012
- [55]
-
[56]
S.-D. Guo, Y .-L. Tao, G. Wang, and Y . S. Ang, How to produce spin-splitting in antiferromagnetic materials, J. Phys.: Condens. Matter 36, 215804 (2024)
work page 2024
-
[57]
W. Xie, X. Xu, Y . Yue, H. Xia, and H. Wang, Piezovalley effect and magnetovalley coupling in altermagnetic semiconductors studied by first - principles calculations, Phys. Rev. B 111, 134429 (2025)
work page 2025
-
[58]
W. Xie, L. Wang, X. Xu, Y . Yue, H. Xia, L. He, H. Wang, School of Microelectronics and Physics, Hunan University of Technology and Business, Changsha 410205, China, School of Physics, Central South University, Changsha 410083, China, and College of Information Engineering, Yangzhou University, Yangzhou 225127, China, Realizing giant valley polarization e...
work page 2025
-
[59]
W. Xie, L. Zhang, Y . Yue, M. Li, and H. Wang, Giant valley polarization and perpendicular magnetocrystalline anisotropy energy in monolayer M X 2 ( M = Ru , Os ; X = Cl , Br ), Phys. Rev. B 109, 024406 (2024)
work page 2024
- [60]
discussion (0)
Sign in with ORCID, Apple, or X to comment. Anyone can read and Pith papers without signing in.