In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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6 Pith papers cite this work. Polarity classification is still indexing.
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The authors unify spin space group and magnetic space group frameworks through oriented SSGs to classify magnetic orders by net magnetization constraints and identify spin-orbit magnetism as a phase where magnetization is induced by spin-orbit coupling.
A ferroelectric/antiferromagnet/ferroelectric trilayer enables symmetry-enforced reversal of altermagnetic spin splitting upon polarization flip, with the effect flipping the anomalous Hall signal, as shown in In2Se3/MnPTe3/In2Se3 calculations.
In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.
citing papers explorer
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Atom-selective spin-polarized transport in a charge-ordered altermagnet
In α-Fe₂PO₅, charge order and C-type antiferromagnetic stacking produce atom-selective spin channels for doped carriers with opposite polarizations on the two sublattices, enabling large conductance modulation in a proposed tunnel junction.
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Symmetry Classification of Magnetic Orders using Oriented Spin Space Groups
The authors unify spin space group and magnetic space group frameworks through oriented SSGs to classify magnetic orders by net magnetization constraints and identify spin-orbit magnetism as a phase where magnetization is induced by spin-orbit coupling.
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Symmetry-Enforced Ferroelectric Switching of Two-Dimensional Altermagnetism
A ferroelectric/antiferromagnet/ferroelectric trilayer enables symmetry-enforced reversal of altermagnetic spin splitting upon polarization flip, with the effect flipping the anomalous Hall signal, as shown in In2Se3/MnPTe3/In2Se3 calculations.
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Magnetoelastic Transport-Path Reconstruction and Giant Magnetotransport Responses in a Two-Dimensional Antiferromagnet
In FePS3, magnetoelastic reconstruction of zigzag transport paths under strain yields giant magnetoresistance up to 10^4% and large energy-independent Hall ratios.
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Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb
First-principles and NEGF calculations propose CrSb/In2Se3/Fe3GaTe2 as a multiferroic tunnel junction with TMR up to 2308%, TER of 707%, and near-perfect spin filtering at above room temperature.
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Fully compensated and uncompensated ferrimagnetic ferrovalley semiconductors
Uniaxial strain converts altermagnets to ferrimagnets with correlated valley polarization; monolayer VCrSeTeO shows intrinsic valley polarization exceeding 400 meV under strain plus SOC, accompanied by reversed valley Hall voltage within the same valley.