Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb

Guangxin Ni; Guoying Gao; Junjie He; Long Zhang

arxiv: 2503.13850 · v4 · submitted 2025-03-18 · ❄️ cond-mat.mtrl-sci · physics.app-ph· physics.comp-ph

Above room temperature multiferroic tunnel junction with the altermagnetic metal CrSb

Long Zhang , Guangxin Ni , Junjie He , Guoying Gao This is my paper

Pith reviewed 2026-05-23 00:02 UTC · model grok-4.3

classification ❄️ cond-mat.mtrl-sci physics.app-phphysics.comp-ph

keywords altermagnetmultiferroic tunnel junctiontunneling magnetoresistancetunneling electroresistanceCrSb heterostructurespin filteringroom-temperature spintronics

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The pith

The CrSb/In2Se3/Fe3GaTe2 heterostructure forms an above-room-temperature multiferroic tunnel junction with magnetically switchable TER and electrically tunable TMR.

A machine-rendered reading of the paper's core claim, the machinery that carries it, and where it could break.

The paper proposes a heterostructure of altermagnetic CrSb, ferroelectric In2Se3 barrier, and ferromagnetic Fe3GaTe2 electrode as a multiferroic magnetic tunnel junction. First-principles and nonequilibrium Green function calculations indicate this structure supports magnetic control of tunneling electroresistance, electric tuning of tunneling magnetoresistance, and dual-mode spin filtering, reaching TMR of 2308 percent and TER of 707 percent with near-perfect efficiency. The performance holds for both Cr and Sb interfaces and remains stable under bias. Control calculations replacing the ferroelectric barrier with nonferroelectric Sb2Se3 or a vacuum gap isolate the contribution of polarization switching. A sympathetic reader would see this as a route to devices that combine electric and magnetic switching in one above-room-temperature platform for spintronics.

Core claim

The CrSb/In2Se3/Fe3GaTe2 heterostructure enables magnetically switchable TER, electrically tunable TMR, and dual-mode controllable spin filtering. Calculations with first-principles and nonequilibrium Green function methods show TMR up to 2308 percent, TER of 707 percent, and near-perfect spin filtering efficiency. Both TMR and TER remain considerable for either Cr or Sb interface termination. The transport performance is robust under bias voltage. These results establish an experimentally fabricable above-room-temperature multiferroic altermagnet-based magnetic tunnel junction.

What carries the argument

The CrSb/In2Se3/Fe3GaTe2 heterostructure, in which the altermagnetic CrSb supplies momentum-dependent spin splitting with zero net moment, the ferroelectric In2Se3 barrier supplies reversible polarization for TER, and the ferromagnetic Fe3GaTe2 electrode supplies conventional spin polarization for TMR.

If this is right

Magnetically switchable tunneling electroresistance arises from ferroelectric polarization reversal.
Electrically tunable tunneling magnetoresistance arises from the altermagnetic spin splitting interacting with the ferromagnetic electrode.
Dual-mode controllable spin filtering reaches near-perfect efficiency in both parallel and antiparallel configurations.
The same high TMR and TER values appear for both Cr-terminated and Sb-terminated interfaces.
Transport metrics remain stable across a range of applied bias voltages.

Where Pith is reading between the lines

These are editorial extensions of the paper, not claims the author makes directly.

The architecture points toward altermagnets serving as pinning layers in practical MTJs that avoid stray fields from net magnetization.
Room-temperature operation with dual electric-magnetic control could simplify integration into existing semiconductor processes for sensing applications.
Similar heterostructures using other altermagnets paired with different ferroelectrics could be tested to optimize the TER magnitude.

Load-bearing premise

The first-principles and nonequilibrium Green function calculations accurately capture the real interface electronic structure, polarization stability, and transport without defects, disorder, or temperature effects that would appear in fabricated devices.

What would settle it

Experimental fabrication of the CrSb/In2Se3/Fe3GaTe2 stack followed by direct measurement of TMR and TER under combined magnetic and electric field sweeps to test whether the observed ratios reach or fall short of the calculated 2308 percent TMR and 707 percent TER.

Figures

Figures reproduced from arXiv: 2503.13850 by Guangxin Ni, Guoying Gao, Junjie He, Long Zhang.

read the original abstract

Altermagnets with nonrelativistic momentum-dependent spin splitting and compensated net magnetic moments have recently garnered significant interest in spintronics, particularly as pinning layers in magnetic tunnel junctions (MTJs). However, room temperature (RT) altermagnet-based MTJs with tunable tunneling magnetoresistance (TMR) or electroresistance (TER) modulated by multiferroicity remain largely unexplored. Here, we propose an experimentally fabricable above-RT multiferroic MTJ, comprising an altermagnetic metal, ferroelectric barrier, and ferromagnetic metal-epitomized by a CrSb/In2Se3/Fe3GaTe2 heterostructure. Our calculations with first-principles and nonequilibrium Green function method indicate that the architecture enables magnetically switchable TER, electrically tunable TMR, and dual-mode controllable spin filtering. To disentangle the roles of ferroelectricity and the tunnel barrier, nonferroelectric Sb2Se3 and a vacuum gap are exploited as control cases. Remarkably, the system achieves TMR up to 2308%, TER of 707%, and near-perfect spin filtering efficiency. Both TMR and TER are considerable for CrSb/In2Se3/Fe3GaTe2 with either Cr or Sb interface. The transport performance is robust under bias voltage. These findings demonstrate the above-RT multiferroic altermagnet-based MTJs and highlight their exciting potential as a versatile platform for next-generation spin dynamics, magnetic sensing, and quantum logic nanodevices.

Editorial analysis

A structured set of objections, weighed in public.

Desk editor's note, referee report, simulated authors' rebuttal, and a circularity audit. Tearing a paper down is the easy half of reading it; the pith above is the substance, this is the friction.

Desk Editor's Note private letter to a colleague

Computational proposal for CrSb/In2Se3/Fe3GaTe2 MTJ predicts TMR of 2308% and TER of 707% but rests on ideal-interface DFT+NEGF at 0 K.

read the letter

This paper proposes a CrSb/In2Se3/Fe3GaTe2 heterostructure as an above-room-temperature multiferroic tunnel junction that combines an altermagnet, ferroelectric barrier, and ferromagnet. The first-principles plus NEGF calculations give TMR up to 2308%, TER of 707%, and near-perfect spin filtering, with claims of magnetically switchable TER and electrically tunable TMR. Both Cr and Sb interfaces are said to work, and performance holds under bias voltage. Control calculations with non-ferroelectric Sb2Se3 and vacuum gaps are included to separate ferroelectric effects from simple barrier thickness changes. That comparison is useful and shows the authors tried to isolate the multiferroic contribution. The work is new in the specific material stack and the dual-control numbers it reports. The calculations appear forward from standard methods rather than fitted to the target result. The central weakness is that all numbers come from atomically perfect supercells at zero temperature with no defects or disorder. The abstract and stress-test note give no indication that the authors tested sensitivity to realistic interface intermixing, vacancies, or finite-temperature effects that would appear in any fabricated device. No experimental data or validation against known TMR/TER benchmarks is mentioned. This limits how far the performance claims can be taken without further checks. The paper is for spintronics groups working on altermagnets and multiferroic junctions. The concrete numbers and control cases make it worth referee scrutiny even though the results are purely computational. I would send it for peer review.

Referee Report

2 major / 0 minor

Summary. The manuscript proposes a CrSb/In2Se3/Fe3GaTe2 heterostructure as an above-room-temperature multiferroic magnetic tunnel junction that integrates an altermagnetic metal electrode, a ferroelectric barrier, and a ferromagnetic metal electrode. First-principles DFT combined with nonequilibrium Green's function (NEGF) transport calculations are reported to predict TMR ratios reaching 2308%, TER of 707%, near-100% spin filtering efficiency, magnetically switchable TER, electrically tunable TMR, and robustness under bias voltage, with control calculations using non-ferroelectric Sb2Se3 and vacuum barriers.

Significance. If the computational predictions are accurate for real interfaces, the work would demonstrate a versatile above-RT platform combining altermagnetism with multiferroic control, enabling dual-mode spin filtering and high-performance metrics not previously achieved in altermagnet-based MTJs. The use of control barriers to isolate ferroelectric effects is a positive methodological feature.

major comments (2)

[Abstract] Abstract: The headline TMR (2308%) and TER (707%) values, together with the claim that the architecture 'enables' these in an 'experimentally fabricable' device, rest entirely on NEGF calculations performed on ideal, defect-free supercells at 0 K. No quantification is given of how atomic intermixing, vacancies, or finite-temperature fluctuations at the CrSb/In2Se3 and In2Se3/Fe3GaTe2 interfaces would alter the transmission probabilities or polarization stability; this assumption is load-bearing for the central performance and fabricability claims.
[Abstract] Abstract and transport results: No error bars, convergence tests with respect to k-point sampling or supercell size, or direct validation against known experimental TMR/TER benchmarks for similar heterostructures are reported. The numerical precision of the quoted percentages therefore cannot be assessed, weakening the quantitative claims.

Simulated Author's Rebuttal

2 responses · 1 unresolved

We thank the referee for the constructive comments on our manuscript. We address each major point below, clarifying the scope of our ideal-interface calculations while agreeing to strengthen the presentation of limitations where appropriate.

read point-by-point responses

Referee: [Abstract] Abstract: The headline TMR (2308%) and TER (707%) values, together with the claim that the architecture 'enables' these in an 'experimentally fabricable' device, rest entirely on NEGF calculations performed on ideal, defect-free supercells at 0 K. No quantification is given of how atomic intermixing, vacancies, or finite-temperature fluctuations at the CrSb/In2Se3 and In2Se3/Fe3GaTe2 interfaces would alter the transmission probabilities or polarization stability; this assumption is load-bearing for the central performance and fabricability claims.

Authors: Our DFT+NEGF results are obtained for ideal, defect-free supercells at zero temperature, which is the standard approach in first-principles transport studies to establish intrinsic upper-bound performance. The 'experimentally fabricable' statement rests on the known epitaxial compatibility of CrSb, In2Se3, and Fe3GaTe2 with existing growth techniques for similar van der Waals heterostructures. We agree that real interfaces may show reduced metrics due to imperfections and will add an explicit caveat in the abstract and discussion sections acknowledging this limitation of the ideal model. revision: yes
Referee: [Abstract] Abstract and transport results: No error bars, convergence tests with respect to k-point sampling or supercell size, or direct validation against known experimental TMR/TER benchmarks for similar heterostructures are reported. The numerical precision of the quoted percentages therefore cannot be assessed, weakening the quantitative claims.

Authors: Convergence with respect to k-point density and supercell size was verified during the calculations using standard dense meshes appropriate for the periodic structures. We will revise the methods section to report the specific k-point sampling and supercell dimensions employed. Direct experimental benchmarks for altermagnet-based multiferroic MTJs do not yet exist, as this architecture is new; the reported values are consistent with high TMR ratios obtained in related computational and experimental MTJ systems. We will also add a brief statement on numerical precision. revision: partial

standing simulated objections not resolved

The quantification of how atomic intermixing, vacancies, or finite-temperature fluctuations at the interfaces would alter the transmission probabilities or polarization stability.

Circularity Check

0 steps flagged

No circularity: standard DFT+NEGF forward calculations

full rationale

The paper computes TMR, TER, and spin-filtering efficiencies via first-principles DFT combined with nonequilibrium Green's function transport on explicit atomic supercells of the CrSb/In2Se3/Fe3GaTe2 stack. These quantities are direct numerical outputs of the Schrödinger equation solution under the stated boundary conditions; they are not obtained by fitting parameters to the target observables, by self-definition, or by any self-citation chain that would render the result tautological. Control calculations with Sb2Se3 and vacuum barriers are likewise independent forward runs. No load-bearing uniqueness theorem, ansatz smuggling, or renaming of known results is present. The derivation chain is therefore self-contained against external benchmarks.

Axiom & Free-Parameter Ledger

0 free parameters · 1 axioms · 0 invented entities

The central claim rests on standard DFT and NEGF methods plus the assumption that the chosen materials form stable, defect-free interfaces whose polarization and magnetic order survive at the simulated temperatures; no free parameters or new entities are introduced in the abstract.

axioms (1)

domain assumption Standard first-principles DFT and NEGF methods accurately predict interface electronic structure and spin-dependent transport in the heterostructure.
Invoked throughout the abstract as the basis for all reported TMR, TER, and spin-filtering values.

pith-pipeline@v0.9.0 · 5814 in / 1406 out tokens · 22894 ms · 2026-05-23T00:02:33.587208+00:00 · methodology

discussion (0)

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Relation between the paper passage and the cited Recognition theorem.

Our calculations with first-principles and nonequilibrium Green function method indicate that the architecture enables magnetically switchable TER, electrically tunable TMR...
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TMR up to 2308%, TER of 707%, and near-perfect spin filtering efficiency

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