A nine-transistor current-mode bistable memory cell in 180 nm CMOS is presented with independent tuning of threshold, hysteresis, and gain, shown via schematic simulations for spike-based logic gates and recurrent neural units.
Memory devices and applications for in-memory computing
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An MTJ-based logic-in-memory design performs fully parallel stochastic bit-stream generation and arithmetic without external random number generators by exploiting device stochasticity.