N-polar AlN HEMTs with 5.2 nm GaN channel reach on/off ratios of 10,000 via abrupt AlN/GaN interface and lower gate leakage, though channel sheet resistance remains high at 2000 Ohm/square.
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Depletion-mode N-polar AlN-based high electron mobility transistors with improved on/off ratios
N-polar AlN HEMTs with 5.2 nm GaN channel reach on/off ratios of 10,000 via abrupt AlN/GaN interface and lower gate leakage, though channel sheet resistance remains high at 2000 Ohm/square.