Reference change · event page
Reference changes · DOI
Erratum: “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering” [J. Appl. Phys.
<b>90</b>
, 4587 (2001)]
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Correction
Crossref
1 open · 1 total · 0 disputed
- Event date
- 2002-07-26
01One-hop citing occurrences
Correction
Open
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
ref [7] ·
2509.17617
· notice #2499
· dispute
Raw extraction · bibliography line
M. V. Fischetti, D. A. Neumayer, E. A. Cartier, Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-𝜅insulator: The role of remote phonon scattering.J. Appl. Phys.90(9), 4587–4608 (2001), doi:10.1063/1.1405826