Citation notice #2499 · 2026-07-11 03:18:59.388936+00:00
Device-scaling constraints imposed by the van der Waals gap formed in two-dimensional materials
Correction
Crossref
Open
cites 10.1063/1.1405826, which carries a correction notice dated 2002-07-26. One-hop deterministic notice: the citation edge exists in the Pith bibliography graph; no model judged whether the citation was load-bearing.
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01Evidence
Raw extraction · bibliography line · bibliography index 7
M. V. Fischetti, D. A. Neumayer, E. A. Cartier, Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-𝜅insulator: The role of remote phonon scattering.J. Appl. Phys.90(9), 4587–4608 (2001), doi:10.1063/1.1405826
02Event
- Type
- Correction
- Source
- Crossref
- Original DOI
- 10.1063/1.1405826
- Notice DOI
- 10.1063/1.1427643
- Date
- 2002-07-26
- Title
- Erratum: “Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering” [J. Appl. Phys. <b>90</b> , 4587 (2001)]
- Reasons
- ['Correction']
- Work
- - (2001) Journal of Applied Physics
03Dispute this notice
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