arxiv: 0910.4010 · v1 · submitted 2009-10-21 · ❄️ cond-mat.mes-hall · cond-mat.mtrl-sci· cond-mat.other

Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

S. Weingart , C. Bock , U. Kunze , F. Speck , Th. Seyller , L. Ley This is my paper

classification ❄️ cond-mat.mes-hall cond-mat.mtrl-scicond-mat.other

keywords transportballisticcrossepitaxialgraphenejunctionsnanoscaleabove

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We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

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Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

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